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  7. RMLV0816BGSD-4S2#HC0
RMLV0816BGSD-4S2#HC0 — Memory ICs

RMLV0816BGSD-4S2#HC0

Renesas Electronics Corporation·
Obsolete

SRAM Memory IC 8Mbit Parallel 45 ns 52-TSOP II

Memory

8Mbit

Org

1M x 8, 512K x 16

Type

SRAM

Speed

45 ns

Supply

2.4V ~ 3.6V

Temp

-40°C ~ 85°C (TA)

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FULL PARAMETRICS

Full parametrics

Specifications11 params
Technology
SRAM
Access Time
45 ns
Memory Size
8Mbit
Memory Type
Volatile
Memory Format
SRAM
Memory Interface
Parallel
Voltage - Supply
2.4V ~ 3.6V
Memory Organization
1M x 8, 512K x 16
Operating Temperature
-40°C ~ 85°C (TA)
Write Cycle Time - Word, Page
45ns
Lifecycle Status
Obsolete

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Memory

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Org

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Speed

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Supply

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Org

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Memory

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Org

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Speed

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Supply

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SRAM - Asynchronous Memory IC 2Mbit Parallel 85 ns 48-BGA (6x8)

Memory

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Org

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Speed

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Supply

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SRAM - Synchronous, QDR II Memory IC 72Mbit Parallel 167 MHz 165-FBGA (15x17)

Memory

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Org

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Speed

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Supply

1.7V ~ 1.9V

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SRAM - Dual Port, Synchronous Memory IC 2Mbit Parallel 167 MHz 4.4 ns 256-FBGA (17x17)

Memory

2Mbit

Org

64K x 36

Speed

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Supply

1.7V ~ 1.9V

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SRAM - Synchronous, SDR Memory IC 72Mbit Parallel 200 MHz 3 ns 165-FBGA (15x17)

Memory

72Mbit

Org

2M x 36

Speed

200 MHz

Supply

3.135V ~ 3.6V

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Cypress Semiconductor

SRAM - Synchronous, SDR Memory IC 72Mbit Parallel 167 MHz 3.4 ns 209-FBGA (14x22)

Memory

72Mbit

Org

1M x 72

Speed

167 MHz

Supply

3.135V ~ 3.6V

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